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 BCM856S
PNP Silicon AF Transistor Array
4 5 6
10%

Precision matched transistor pair: IC For current mirror applications
Type BCM856S
Maximum Ratings Parameter
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Total power dissipationTS = 115 C Junction temperature Storage temperature
Thermal Resistance Parameter
Junction - soldering point1)
1For calculation of R thJA please refer to Application Note Thermal Resistance

Low collector-emitter saturation voltage Two (galvanic) internal isolated Transistors Complementary type: BCM846S
C1 6 B2 5 E2 4
2 1
3
VPS05604
TR2 TR1
1 E1
2 B1
3 C2
EHA07175
Marking Pin Configuration Package 3Ms 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
Symbol VCEO VCES VCBO VEBO IC ICM Ptot Tj Tstg
Symbol RthJS
Value 65 80 80 5 100 200 250 150 -65 ... 150
Unit V
mA mW C
Value
Unit
140
K/W
1
Aug-30-2002
BCM856S
Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values min. DC Characteristics typ. max.
Unit
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0 A
V(BR)CEO V(BR)CBO V(BR)CES V(BR)EBO ICBO
65 80 80 5
-
-
V
Collector-base breakdown voltage
IC = 10 A, IE = 0 A
Collector-emitter breakdown voltage
IC = 10 A, VBE = 0 A
Emitter-base breakdown voltage
IE = 10 A, IC = 0 A
Collector-base cutoff current
VCB = 30 V, IE = 0 A VCB = 30 V, IE = 0 A, TA = 150 C
nA 250 290 90 250 700 850 650 15 5 200 450 mV 300 650 750 820
%
DC current gain-1)
IC = 10 A, VCE = 5 V IC = 2 mA, VCE = 5 V
hFE
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA
VCEsat
Base emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA
VBEsat
VBE(ON)
mV mV
Base-emitter voltage-1)
IC = 2 mA, VCE = 5 V IC = 10 mA, VCE = 5 V IB = 1 A, VCE1 = VCE2 = 1.0V IB = 100 A, VCE1 = VCE2 = 1.0V
1Puls
600 IC
test: t < 300s; D < 2%
2
Matching
-10 -10
10 10
Aug-30-2002
BCM856S
Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values min. AC Characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Short-circuit input impedance IC = 2 mA, VCE = 5 V, f = 1 kHz Open-circuit reverse voltage transf. ratio IC = 2 mA, VCE = 5 V, f = 1 kHz Short-circuit forward current transf. ratio IC = 2 mA, VCE = 5 V, f = 1 kHz IC = 2 mA, VCE = 5 V, f = 1 kHz Noise figure IC = 200 A, VCE = 5 V, f = 1 kHz, f = 200 Hz, RS = 2 k F 10 Open-circuit output admittance h21e h22e 330 30 S h12e 2 10-4 h11e 4.5 k Ceb 8 Ccb 3 pF fT 250 MHz typ. max.
Unit
dB
3
Aug-30-2002
BCM856S
Collector-base capacitance CCB = Emitter-base capacitance CEB=
BC 856...860
(VEB0)
300
C CB0 ( C EB0 )
12 pF 10
EHP00376
mW
8
C EBO
P tot
200
6
150
4
100
C CBO
50
2
0 10 -1
5
10 0
V VCB0
10 1 (VEB0 )
0 0
20
40
60
80
100
10 3
K/W
10 3
10 2
Ptotmax/P totDC
-
RthJS
10 2
10 1
10 0
0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0
10 1
10 -1 -6 10
10
-5
10
-4
10
-3
10
-2
s
10
0
10 0 -6 10
10
-5
tp
4
Permissible Pulse Load RthJS =
(tp )
Permissible Pulse Load Ptotmax/PtotDC = (tp)
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
10
-4
10
-3
10
-2
Aug-30-2002
(VCB0)
Total power dissipation Ptot = (TS )

120 C
150
TS
s
10
0
tp
BCM856S
Transition frequency fT = VCE = 5 V
10 3 MHz
(IC )
Base-emitter saturation voltage
EHP00378
10 2 mA
fT
5
C
100 C 25 C -50C
10 1 5
10 2
5
10 0 5
10 1 10 -1
5 10 0
5
10 1
mA C
10 2
10 -1
IC = (VCEsat), hFE = 20
10 2
VCE = Parameter
EHP00380
10 -1
A 5V 1V 5V 1V 5V 1V
C
mA 100 C 25 C -50 C
IC
10 -2
10 1 5
TA=100C
10
-3
TA=25C
10 -4
10 5
0
10 -5
10 -1
0
0.1
0.2
0.3
0.4
V 0.5 VCEsat
10 -6 0.2
0.3
0.4
0.5
0.6
5
Collector-emitter saturation voltage
Collector current IC =
IC =
(VBEsat ), hFE = 20
EHP00379
0
0.2
0.4
0.6
0.8
V 1.2 V BEsat
(VBE )
TA=-50C
0.7
0.8
V VBE
1
Aug-30-2002
BCM856S
DC current gain hFE = VCE = 5V
10 3
EHP00382
15 mA
h FE 5
100 C 25 C
12 11
IB = 40A IB = 36A IB =32A IB = 28A IB = 24A IB = 20A IB = 16A IB = 12A IB = 8A IB = 4A
10 5
2
-50 C
IC
10 9 8 7 6
10 1 5
5 4 3 2 1
10 0 10 -2
5 10 -1
5 10 0
5 10 1
mA 10 2
0 0
1
2
3
C
VCBO = 30 V
10 4 nA
CB0
10 3 5 10 2 5 10 1 5 10 5 10 -1
0
max
typ
0
50
100
Collector cutoff current ICBO =
(TA)
EHP00381
C TA
150
6
(IC)
Output characteristics IC = (VCE), IB = parameter
V VCE
5
Aug-30-2002
BCM856S
Definition of matching IC = (IC2-IC1)/IC1
6
5
4
T1
T2
1
2
3
Ib
Ic 1
Ic 2
Vce1
Vce2
7
Aug-30-2002
Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 Munchen
(c) Infineon Technologies AG 2004.
All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.Infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.


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