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BCM856S PNP Silicon AF Transistor Array 4 5 6 10% Precision matched transistor pair: IC For current mirror applications Type BCM856S Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Total power dissipationTS = 115 C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point1) 1For calculation of R thJA please refer to Application Note Thermal Resistance Low collector-emitter saturation voltage Two (galvanic) internal isolated Transistors Complementary type: BCM846S C1 6 B2 5 E2 4 2 1 3 VPS05604 TR2 TR1 1 E1 2 B1 3 C2 EHA07175 Marking Pin Configuration Package 3Ms 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 Symbol VCEO VCES VCBO VEBO IC ICM Ptot Tj Tstg Symbol RthJS Value 65 80 80 5 100 200 250 150 -65 ... 150 Unit V mA mW C Value Unit 140 K/W 1 Aug-30-2002 BCM856S Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values min. DC Characteristics typ. max. Unit Collector-emitter breakdown voltage IC = 10 mA, IB = 0 A V(BR)CEO V(BR)CBO V(BR)CES V(BR)EBO ICBO 65 80 80 5 - - V Collector-base breakdown voltage IC = 10 A, IE = 0 A Collector-emitter breakdown voltage IC = 10 A, VBE = 0 A Emitter-base breakdown voltage IE = 10 A, IC = 0 A Collector-base cutoff current VCB = 30 V, IE = 0 A VCB = 30 V, IE = 0 A, TA = 150 C nA 250 290 90 250 700 850 650 15 5 200 450 mV 300 650 750 820 % DC current gain-1) IC = 10 A, VCE = 5 V IC = 2 mA, VCE = 5 V hFE Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA VCEsat Base emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA VBEsat VBE(ON) mV mV Base-emitter voltage-1) IC = 2 mA, VCE = 5 V IC = 10 mA, VCE = 5 V IB = 1 A, VCE1 = VCE2 = 1.0V IB = 100 A, VCE1 = VCE2 = 1.0V 1Puls 600 IC test: t < 300s; D < 2% 2 Matching -10 -10 10 10 Aug-30-2002 BCM856S Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values min. AC Characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Short-circuit input impedance IC = 2 mA, VCE = 5 V, f = 1 kHz Open-circuit reverse voltage transf. ratio IC = 2 mA, VCE = 5 V, f = 1 kHz Short-circuit forward current transf. ratio IC = 2 mA, VCE = 5 V, f = 1 kHz IC = 2 mA, VCE = 5 V, f = 1 kHz Noise figure IC = 200 A, VCE = 5 V, f = 1 kHz, f = 200 Hz, RS = 2 k F 10 Open-circuit output admittance h21e h22e 330 30 S h12e 2 10-4 h11e 4.5 k Ceb 8 Ccb 3 pF fT 250 MHz typ. max. Unit dB 3 Aug-30-2002 BCM856S Collector-base capacitance CCB = Emitter-base capacitance CEB= BC 856...860 (VEB0) 300 C CB0 ( C EB0 ) 12 pF 10 EHP00376 mW 8 C EBO P tot 200 6 150 4 100 C CBO 50 2 0 10 -1 5 10 0 V VCB0 10 1 (VEB0 ) 0 0 20 40 60 80 100 10 3 K/W 10 3 10 2 Ptotmax/P totDC - RthJS 10 2 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 tp 4 Permissible Pulse Load RthJS = (tp ) Permissible Pulse Load Ptotmax/PtotDC = (tp) D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 -4 10 -3 10 -2 Aug-30-2002 (VCB0) Total power dissipation Ptot = (TS ) 120 C 150 TS s 10 0 tp BCM856S Transition frequency fT = VCE = 5 V 10 3 MHz (IC ) Base-emitter saturation voltage EHP00378 10 2 mA fT 5 C 100 C 25 C -50C 10 1 5 10 2 5 10 0 5 10 1 10 -1 5 10 0 5 10 1 mA C 10 2 10 -1 IC = (VCEsat), hFE = 20 10 2 VCE = Parameter EHP00380 10 -1 A 5V 1V 5V 1V 5V 1V C mA 100 C 25 C -50 C IC 10 -2 10 1 5 TA=100C 10 -3 TA=25C 10 -4 10 5 0 10 -5 10 -1 0 0.1 0.2 0.3 0.4 V 0.5 VCEsat 10 -6 0.2 0.3 0.4 0.5 0.6 5 Collector-emitter saturation voltage Collector current IC = IC = (VBEsat ), hFE = 20 EHP00379 0 0.2 0.4 0.6 0.8 V 1.2 V BEsat (VBE ) TA=-50C 0.7 0.8 V VBE 1 Aug-30-2002 BCM856S DC current gain hFE = VCE = 5V 10 3 EHP00382 15 mA h FE 5 100 C 25 C 12 11 IB = 40A IB = 36A IB =32A IB = 28A IB = 24A IB = 20A IB = 16A IB = 12A IB = 8A IB = 4A 10 5 2 -50 C IC 10 9 8 7 6 10 1 5 5 4 3 2 1 10 0 10 -2 5 10 -1 5 10 0 5 10 1 mA 10 2 0 0 1 2 3 C VCBO = 30 V 10 4 nA CB0 10 3 5 10 2 5 10 1 5 10 5 10 -1 0 max typ 0 50 100 Collector cutoff current ICBO = (TA) EHP00381 C TA 150 6 (IC) Output characteristics IC = (VCE), IB = parameter V VCE 5 Aug-30-2002 BCM856S Definition of matching IC = (IC2-IC1)/IC1 6 5 4 T1 T2 1 2 3 Ib Ic 1 Ic 2 Vce1 Vce2 7 Aug-30-2002 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 Munchen (c) Infineon Technologies AG 2004. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.Infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. |
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